Panel Sessions

 

High Voltage SiC Technology: Present Status and Challenges

Time: Tuesday, 9:45 AM – 10:30 AM

SiC power devices in the 1-2 kV range are in production and gaining ground in lower voltage power electronic applications. High voltage devices are not presently commercially available and their market introduction and adoption necessitates development in several areas. These include high quality thick epitaxial films with low defect densities, processing innovations, high voltage modules, circuit models, gate drives, remedy of the high dV/dt and EMI/EMC issues, and insertion in power systems. The panel will discuss current technology status, and obstacles that need to be overcome for commercial success.

Moderator: Victor Veliadis, PowerAmerica

Areas of discussion and panelists:

  • Growth of high-quality thick epilayers”Mike McMillan, Global Power technology
  •  “Material quality of thick epilayers, killer defects”, Bob Stahlbush, NRL
  • Processing of wafers with thick epilayers”, Dave Grider, Wolfspeed
  • High voltage modules”, Lauren Boteler, ARL
  • Gate drivers with proper isolation and protection, and power electronics applications utilizing high voltage devices”Jin Wang, Ohio State University

 

Commercialization of GaN devices in High-Frequency Power Electronic Applications

Time: Tuesday, 10:30 AM – 11:15 AM

For years, market studies have predicted exponential growth in GaN revenue in power electronic applications. There are a few high-performance power supplies beginning to emerge on the market, but these are typically not operating at high frequency. What are the key challenges, developments, needs that will lead to success and pave the way to broader market adoption?

Moderator: Eric Persson, Infineon

Panelists:

  • Prof. Alex Huang, University of Texas at Austin
  • Dr. Sandeep Bahl, TI
  • Dr. Yuanzhe Zhang, EPC
  • Dr. Nick Fichtenbaum, Navitas Semiconductor
  • Peter Di Maso, GaN Systems