Please download the preliminary technical program in pdf form here.


Tuesday, November 8, 2022, 1:30 PM – 2:50 PM


1.A. SiC Devices – Novel Devices

Session Chairs: Aivars Lelis and Victor Veliadis


1:30 PM – 1:50 PM          (ID 3054) A New Cell Topology for 4H-SiC Planar Power MOSFETs
Shengnan Zhu, Tianshi Liu, Arash Salemi, Marvin White, Hema Maddi, David Sheridan, Anant Agarwal

1:50 PM – 2:10 PM           (ID 3058) Exploring Optimum Designs for 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs)

Stephen Mancini, Seung Yup Jang, Dongyoung Kim, Woongje Sung

2:10 PM – 2:30 PM          (ID 3063) Design Optimization and Surge Current Capability of 4H-SiC Lateral Deep P+ JBS Diode on Thin RESURF Layer
Atsushi Shimbori, Alex Huang

2:30 PM – 2:50 PM          (ID 3007) Characterization of Near Conduction Band SiC/SiO2 Interface Traps in Commercial 4H-SiC Power MOSFET’s
Hema Lata Rao Maddi, Suvendu Nayak, Vishank Talesara, Yibo Xu, Wu Lu, Anant Agarwal


1.B GaN Devices – Advanced Characterization

Session Chairs: Robert Kaplar


1:30 PM – 1:50 PM          (ID 3006) Reverse Breakdown Time of Wide Bandgap Diodes

Jack Flicker, Emily Schrock, Robert Kaplar


1:50 PM – 2:10 PM          (ID 3014) Symmetrical VTH/RON Drifts Due to Negative/Positive Gate Stress in p-GaN Power HEMTs

Nicolò Zagni, Marcello Cioni, Maria Eloisa Castagna, Maurizio Moschetti, Ferdinando Iucolano, Giovanni Verzelles, Allessandro Chini


2:10 PM – 2:30 PM          (ID 3046) Peak Channel Temperature Determination for an AlGaN/GaN HEMT with Raman Thermography and MTTF Extraction for Long Term Reliability

Cristina Miccoli, Leonardo Gervasi, Viviana Cerantonio, Ferdinando Iucolano, Martin Kuball, James Pomeroy


2:30 PM – 2:50 PM          (ID 3068) High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology

Mengyang Yuan, Qingyun Xie, John Niroula, Mohamed Fadil Isamotu, Nitul Rajput, Nadim Chowdhury, Tomás Palacios

Tuesday, November 8, 2022, 3:10 PM – 4:30 PM


1.C SiC Devices – Device Reliability and Robustness

Session Chairs: Aivars Lelis and Victor Veliadis


3:10 PM – 3:30 PM          (ID 3069) Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs

Limeng Shi, Tianshi Liu, Shengnan Zhu, Jiashu Qian, Michael Jin, Hema Lata Rao Maddi, Marvin H White, Anant K Agarwal


3:30 PM – 3:50 PM          (ID 3067) A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV SiC Power MOSFETs
Jiashu Qian, Tianshi Liu, Jake Soto, Mowafak Al-Jassim, Robert Stahlbush, Naeemulah Mahadik, Limeng Shi, Michael Jin, Anant Agarwal


3:50 PM – 4:10 PM          (ID 3052) A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs
Dongyoung Kim, Skylar Deboer, Seung Yup Jang, Adam Morgan, Woongje Sung


4:10 PM – 4:30 PM          (ID 3036) Failure Rate Calculation Due to Neutron Flux with SiC MOSFETs and Schottky Diodes
Dennis Meyer, Xuning Zhang, Reenu Garg, Bruce Odekirk, Steve Chenetz, Ehab Tarmoom, Kevin Speer


1.D GaN Devices – Industry and Others

Session Chairs: Robert Kaplar


3:10 PM – 3:30 PM          (ID 3055) Scaling of EPC’s 100 V Enhancement-Mode Power Transistors

Gordon Stecklein, Jordan Green, Christopher Wong, Joe Cao, Bob Beach


3:30 PM – 3:50 PM          (ID 3034) Advancement in Integration for GaN Power ICs: Autonomous Protection and Loss-Less Sensing

Tom Ribarich, Stephen Oliver, Marco Giandalia, Llew Vaughan-Edmunds



3:50 PM – 4:10 PM          (ID 3020) Threshold Voltage Behavior and Short-Circuit Capability of p-Gate GaN HEMTs Depending on Drain- and Gate-Voltage Stress

Thorsten Oeder, Martin Pfost



4:10 PM – 4:30 PM          Withdrawn High Volume GaN Production and Reliability Methods

Anthony Schiro, Darshan Gandhi


Wednesday, November 9, 2022, 2:30 PM – 4:10 PM


2.A SiC Applications – 1

Session Chairs: Babak Parkhideh and Zhao Yuan


2:30 PM – 2:50 PM          (ID 3057) Advantages of SiC-Based Devices on the Design of Dual-Active Bridge DC/DC Converter for DC Faults

Shrivatsal Sharma, Yos Prabowo, Subhransu Satpathy, Subhashish Bhattacharya


2:50 PM – 3:10 PM          (ID 3030) Active Gate Driving of Cascoded SiC JFETs

Arijit Sengupta, Sima Azizi Aghdam, Mohammed Agamy


3:10 PM – 3:30 PM          (ID 3028) High Frequency High Power Integrated Transformer Design for Resonant Converters with SiC Devices

Tianlong Yuan, Feng Jin, , Zheqing Li, Qiang Li


3:30 PM – 3:50 PM          (ID 3047) Short Circuit Fault Induced Failure of SiC MOSFETs in DC Solid-State Circuit Breakers

Fei Lu, Hua Zhang, Reza Kheirollahi, Shuyan Zhao


3:50 PM – 4:10 PM          (ID 3021) Noise Analysis of Current Sensor for Medium Voltage Power Converter Enabled by Silicon-Carbide MOSFETs

Morten Rahr Nielsen, Mathias Kirkeby, Hongbo Zhao, Dipen Narendra Dalal, Michael Møller Bech, Stig Munk-Nielsen


2.B GaN Applications – 1

Session Chairs: Jason Zhang and Nabil Akel


2:30 PM – 2:50 PM          (ID 3011) Next Generation of GaN Single-Board High-Power Modules for Datacenter

Rahil Samani, Juncheng Lu, Ignacio Galiano Zurbriggen


2:50 PM – 3:10 PM          (ID 3056) 100V GaN for Highly Efficient 1kW Motor Drive Applications

Asantha Kempitiya, Hrach Amirkhanian, Srikanth Yerra, Kapil Kelkar


3:10 PM – 3:30 PM          (ID 3066) Compact Three-Level GaN Power Module Suitable for Active-Neutral-Point-Clamped (ANPC) Three-Level Converter

Ziwei Liang, Liyan Zhu, Yue Sun, Hua Bai


3:30 PM – 3:50 PM          (ID 3008) Design of High Current, High Power Density GaN Based Motor Drive for All Electric Aircraft Application

Waqar A. Khan, Armin Ebrahimian, Iman Hosseini, Nathan Weise


3:50 PM – 4:10 PM          (ID 3053) Design of Three-Level Flying Capacitor Totem Pole PFC in USB Type-C Power Delivery for Aircraft Applications

Tianyu Zhao, Rolando Burgos, Bo Wen, Andrew McLean, Rodrigo Fernández Mattos



Wednesday, November 9, 2022, 4:30 PM– 5:50 PM


SiC Applications – 2

Session Chairs: Babak Parkhideh and Zhao Yuan


4:30 PM – 4:50 PM          (ID 3024) Design of High Power Converter with Single Low Ron Discrete SiC Device
Alex Huang, Qingyun Huang, Chen Chen, Zibo Chen


4:50 PM – 5:10 PM          (ID 3051) Comparative Investigation of Current-Source Inverters Using SiC Discrete Devices and Power Modules
Bulent Sarlioglu, Thomas Jahns, Sangwhee Lee, Feida Chen


5:10 PM – 5:30 PM          (ID 3042) A Medium-Voltage Transformer with Integrated Leakage Inductance for 10 kV SiC-Based Dual-Active-Bridge Converter
Zihan Gao, Haiguo Li, Fred Wang


5:30 PM – 5:50 PM            (ID 3018) Development of a 250°C 15kV SuperCascode Switch Using SiC JFET Technology

David Sanabria, Randy Appert, Steven Pronko, Joshua Major, Douglas DeVoto, Jane Lehr, Nicolas Gonzalez, David Ginley, Karen Heinselman


GaN Applications – 2

Session Chairs: Jason Zhang and Nabil Akel


4:30 PM – 4:50 PM          (ID 3031) GaN Power Converter Applied to Electrocaloric Heat Pump Prototype and Carnot Cycle

Stefan Moench , Richard Reiner , Kareem Mansour , Michael Basler , Patrick Waltereit , Rudiger Quay  , Kilian Bartholome


4:50 PM – 5:10 PM          (ID 3065) Design Considerations of a GaN-Based Three-Level Traction Inverter for Electric Vehicles

Subhransu Satpathy, Partha Pratim Das, Subhashish Bhattacharya, Victor Veliadis


5:10 PM – 5:30 PM          (ID 3043) Novel High-voltage-Gain High-Frequency Non-Isolated Three-Port dc-dc Converter with Zero Input Current Ripple and Soft-Switching Capability

Zahra Saadatizadeh, Pedram Chavoshipour Heris, Alan Mantooth


5:30 PM – 5:50 PM          (ID 3048) Comparison of Thermally Optimized SMD Packages for 100 V GaN HEMTs in 300 KHz Buck Converter High Current Applications

Dominik Koch, Ankit Sharma, Till Huesgen, and Ingmar Kallfass






Poster Presentations

Tuesday, November 8, 2020, 6:00 PM – 8:00 PM


Session Chairs:  Sameh Khalil, Robert Kaplar

GaN Applications Posters

(ID 3016) A 5 to 50 V, -25 to 225℃, 0.065 %/V GaN MIS-HEMT Monolithic Compact 2T Voltage Reference

Ziqian Li, Yi Shen, Ang Li, Wen Liu


(ID 3038) Three-Level ANPC Inverter Common-Mode Voltage Analytical Characterization

Yang Huang, Xin Xia, Hua Bai, Fanning Jin, Xiaodong Shi, Bing Cheng


(ID 3044) Bidirectional High Voltage Conversion Ratio High-Frequency DC/DC Converter with Low Number of Components

Pedram Chavoshipour Heris, Zahra Saadatizadeh, Alan Mantooth, Rahul Biswash


(ID 3073) Analysis of a Switching Event and its Impact on Gate Drive in Gallium-Nitride Based Bi-Directional Switches

Mustafeez Hassan, Yuxuan Wu, Fang Luo


SiC Devices – Posters

(ID 3009) 3kV 6.7mOhm·cm2 4H-SiC BJT with Highly Effective Four-step Junction Termination Extension (JTE)

Xixi Luo, Alex Huang


(ID 3059) Area-Efficient High-Voltage (HV) Lateral MOSFETs for Discrete Device Development and Power IC Integration

Sundar Babu Isukapati, Seung Yup Jang, Woongje Sung


(ID 3062) A New Layout Method for Junction Field Effect Transistors (JFETs) on 4H-SiC that Provides a Significant Reduction in On-Resistance

Justin Lynch, Nick Yun, Seung Yup Jang, Adam J. Morgan, Woongje Sung


(ID 3013) Source Turn-off (STO) MOSFET

Zhicheng Guo, Alex Huang


(ID 3060) Short Circuit Ruggedness and Partial Discharge Evaluation of a 3.3 kV SiC MOSFET Power Module

Ke Wang, Yizhou Cong, Pengyu Fu, Xiao Li, Qianyi Cheng, Boxue Hu, Jin Wang, Ashish Kumar, Kraig Olejniczak, Daniel Pelletier, Amit Goyal


SiC  Applications – Posters

(ID 3003) A Highly Integrated Sensorless Field Oriented Control BLDC / PMSM Inverter with 99% Efficiency Enabled by an All-in-One System Integrated Full SiC Intelligent Power Module (sIPM)

Fu-Jen Hsu, Cheng-Tyng Yen, Hsiang-Ting Hung , Guan-Wei Lin, Chih-Feng Huang, Lung-Sheng Lin, I-Chi Lin , Chih-Fang Huang, Ta-Yung Yang


(ID 3079) In-Situ Ultrafast Isolated Sensing Techniques for Real-Time Diagnostics, Prognostics, and Protection of SiC Devices

Ali Parsa Sirat, Chondon Roy, Daniel Evans, James Gafford, Babak Parkhideh


(ID 3005) Series Compensation Using T-Type Modular Dc Circuit Breaker (T-Breaker) to Improve DC Microgrid Stability

Faisal Alsaif, Yue Zhang, Nihanth Adina, Khalid Alkhalid, Jin Wang


(ID 3012) Thermal Design and Experimental Evaluation of a 1kV, 500A T-Type Modular DC Circuit Breaker

Baljit Riar, Jeffrey Ewanchuk, Hailing Wu, Yue Zhang, Xiao Li, Dihao Ma, Rob Borjas, Jin Wang


(ID 3026) Embedding Solutions for Vertical SiC and GaN Power Devices

Hoang Linh Bach, Anqi Huang, Yue Teng, Hubert Rauh, Andreas Schletz, Michael Jank, Martin März


(ID 3064) Busbar Design and Optimization for High Power Three-Phase Inverter with WBG Device

Yuxuan Wu, Mustafeez Hassan, Fang Luo


(ID 3041) A Flux Balancing Strategy for 10-kV SiC-Based Dual-Active-Bridge Converter

Zihan Gao, Pengfei Yao, Haiguo Li, Fred Wang