Tutorial topics have been selected for Wednesday, 31 October 2018. They include presentations focused on applications and devices in silicon carbide (SiC), gallium nitride (GaN), and ultra-wide bandgap (UWBG) semiconductors. The seven tutorials to be offered are:

1.     SiC Power Device Reliability by D. A. Gajewski, Wolfspeed

2.     Measurement and Analysis Method of Parasitic Capacitance and Inductance in Power Devices and Power Electronic Circuits by R. Takeda, Keysight Technologies

3.     Silicon Carbide Power Devices: Making the Transition from Silicon by V. Veliadis, North Carolina State University

4.     Developing High Power, Medium Voltage Silicon Carbide based Power Electronics by J. Wang, The Ohio State University; M. Scott, Miami University; H. Cai, Southeast University

5.     Advanced Power Module Packaging: from Design to Validation bt F. Luo, D. Huitink, and Y. Peng, University of Arkansas

6.     How to Design High Efficiency and High Density GaN Switching Power Supply by R. Yu, and Q. Huang, University of Texas at Austin

7.     Emerging Ultra-Wide Band Gap (UWBG) Power Electronic Devices by S. Krishnamoorthy, University of Utah