Tutorial	Speaker	Affiliation	Title
1.	Woongje Sung	University of Albany	SiC Power MOSFET Design and Overview of Recent Trends
2.	Zhikai Tang	Texas Instruments	GaN Power Switching Devices for Energy-Efficient Applications
3.	Hongping Zhao	The Ohio State University	Development of Semiconductors for Next Generation Power Electronics: From Wide Bandgap GaN to Ultrawide Bandgap Ga2O3, (AlxGa1-x)2O3 and LiGa5O8
4.	Robert Kaplar & Andrew Binder	Sandia National Laboratories	Potential, Progress, and Challenges for Ultra-Wide-Bandgap Semiconductors
5.	Hiu Yung Wong	San Jose State University	(Ultra) Wide Bandgap Material Process and Device TCAD Simulation Methodologies
6.	Stig Munk-Nielsen	Aalborg University	10kV SiC MOSFETs based Power Modules and Power Converters
7.	Stefan Mönch & Sibylle Dieckerhoff	University of Stuttgart & TU Berlin	From Lateral and Vertical GaN Devices to Power ICs and Smart Converters
8.	Shajjad Chowdhury, Vandana Rallabandi, Mostak Mohammad	Oak Ridge National Laboratory, Vandana Rallabandi	WBG for Pushing Wireless Power Transfer Boundaries
9.	Roger Brewer	Lockheed Martin	Capacitors and Aircraft Power System Considerations for Higher Temperature Operation and Wide Bandgap Enablement